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 VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7928
Features
* Rise Times Less Than 100ps * High Speed Operation (Up to 3.2Gb/s NRZ Data) * Differential or Single-Ended Inputs * Single Supply * ECL Compatible Clock and Data Inputs * Direct Access to Modulation and Bias FETs * Data Density Monitors * On-chip Reclocking Register * On-chip Mux for Clocked or Non-clocked Applications * On-chip 50 Input Termination: Clock and Data * Enhanced Pinout
SONET/SDH 3.2Gb/s Laser Diode Driver
Applications
* SONET/SDH @ 622Mb/s, 1.244Gb/s, 2.488Gb/s, and 3.125Gb/s * Full Speed Fibre Channel (1.062Gb/s)
General Description
The VSC7928 is a single 5V supply, 3.2Gb/s laser diode driver with direct access to the laser modulation and bias FETs. Laser bias and modulation currents are set by external components allowing precision monitoring and setting of the current levels. Data density outputs are provided to allow the user to adjust the laser bias in high unbalanced data applications. Clock and data inputs are differentially terminated to 50.
VSC7928 Block Diagram
MK NMK NIOUT DIN 50 ** DINTERM* 50 ** NDIN DCC CLK 50 ** CLKTERM* 50 ** NCLK SEL MIP *Terminated to Off-chip Capacitor **On Die Components MIB VIB VIP IMOD IBIAS M U X IOUT
DQ
IBIAS
G52246-0, Rev 3.0 04/05/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.2Gb/s Laser Diode Driver
Table 1: Signal Pin Reference Signal
DIN, NDIN MK, NMK NIOUT IOUT VSS GND VIP MIP VIB MIB IBIAS CLK, NCLK DINTERM CLKTERM DCC SEL GND/NC Total Pins
VSC7928
Description
Data Input and Data Reference, On-chip 50 Termination Data Density Differential Outputs Laser Modulation Current Output (Complementary) Laser Modulation Current Output (To Laser Cathode) Negative Voltage Rail Positive Voltage Rail Modulation Gate Node Modulation Source Node Bias Gate Node Bias Source Node Laser Bias Output (To Laser Cathode) Clock Input and Clock Reference, On-chip 50 Termination Data Reference Clock Reference Duty Cycle Control, Leave Floating Clk/Non-clk Data Select No connection (leave floating or connect to GND)
Type
In Out Out Out Pwr Pwr In In In In Out In In In In In Pwr
Level
ECL ECL
# Pins
2 2 1 1 2 5/6(1) 1 1 1 1 1 2 1 1 1 1 7(1) 24/32*
-- --
Pwr Pwr DC DC DC DC DC ECL DC DC DC DC DC
--
--
NOTE: (1) Applicable to 32-pin TQFP package only.
Table 2: Mux Select Logic Table SEL
VSS GND N/C
Mode Select
Clocked Data In Non-clocked Data In Non-clocked Data In
Table 3: Absolute Maximum Ratings Symbol
VSS TJ TSTG
Rating
Negative Power Supply Voltage Maximum Junction Temperature Storage Temperature
Limit
VCC to -6.0V -55C to + 125C -65C to +150C
Table 4: Recommended Operating Conditions Symbol
GND VSS TCl TJ
Parameter
Positive Voltage Rail Negative Voltage Rail Operational Temperature Junction Temperature
(1)
Min --
-5.5 -40
Typ
0 -5.2
Max --
-4.9 85
(2)
Units
V V C C
Conditions
--
-- --
Power dissipation = 1.3W
125
NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section "Calculation of the Maximum Case Temperature" for detailed maximum temperature calculations.
Page 2
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52246-0, Rev 3.0 04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7928
Table 5: High Speed Inputs and ECL Outputs Symbol
VIN VCM VOH VOL VIN
SONET/SDH 3.2Gb/s Laser Diode Driver
Parameter
Single-ended Input Voltage Swing Differential Input Common Mode Range ECL Output High Voltage ECL Output Low Voltage On-Chip Terminations
Min
300 -2.3 -1200
Typ
-- -- -- -- --
Max
1500 -1.3
Units
mVp-p V mV mV
Conditions
VCM = -2.0V VSS = -5.2V 50 to -2.0V 50 to -2.0V
--
-1600 65
--
35
Table 6: Power Dissipation Symbol
IVSS PD
Parameter
Power Supply Current (VSS) Total Power Dissipation
Min -- --
Typ 80 --
Max
120 700
Units
mA mW
Conditions
VSS = -5.5V, IMOD = IBIAS = 0mA, MK/NMK open circuit VSS = -5.5V, IMOD = IBIAS = 0mA, RLOAD = 25 to GND, MK/NMK terminated 50 to -2V
Table 7: Laser Driver DC Electrical Specifications Symbol
IBIAS IMOD VIB VIP VOCM
Parameter
Programmable Laser Bias Current Programmable Modulation Current Laser Bias Control Voltage Laser Modulation Control Voltage Output Voltage Compliance
Min
2 2 -- --
Typ
-- -- -- -- GND 3V
Max
100 100 VSS + 2.1 VSS + 2.1 --
Units
mA mA V V V
Conditions
IBIAS = 50mA IMOD= 60mA VSS = -5.2V
--
Table 8: Laser Driver AC Electrical Specifications Symbol
tR, tF tSU tH
Parameter
Output Rise and Fall Times Data to Clock Setup Time Hold Time
Min -- -- 20
Typ --
50 50
Max
100
Units
ps ps ps
Conditions
25 load, 20%-80%, 20mA < IMOD < 60mA, IBIAS = 60mA
90 --
-- --
G52246-0, Rev 3.0 04/05/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.2Gb/s Laser Diode Driver
Figure 1: On-Chip Data and Clock Input Configuration
VSC7928
GND
DIN (CLK) DINTERM (CLKTERM) NDIN (NCLK)
GND DATA BUFFER (CLOCK BUFFER)
X
*
50
* *
4.0K 6.4K
X
* 50
X
*On-chip Components
VSS VSS
DINTERM to -2.0V for Differential ECL Inputs
Figure 2: Single-Ended Operation
7928
DATA SOURCE
0.1f GND 0.1f
DIN DINTERM NDIN
0.1f 0.1f GND
CLOCK SOURCE
0.1f GND
CLK CLKTERM NCLK
0.1f GND
Page 4
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52246-0, Rev 3.0 04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7928
SONET/SDH 3.2Gb/s Laser Diode Driver
Figure 3: Single-Ended AC-Coupled
GND
DIN (CLK)
0.1f SOURCE
DINTERM (CLKTERM)
X
50 4.0K -2.0V 50 6.4K
X X
0.1f GND
NDIN (NCLK)
0.1f
VSS
GND
Figure 4: Differential AC-Coupled
GND
0.1f SOURCE 0.1f
DIN (CLK)
X
DINTERM (CLKTERM)
50
4.0K -2.0V
X
0.1f GND
NDIN (NCLK)
50
6.4K
X
VSS
Figure 5: Differential DC-Coupled
GND
DIN (CLK)
X
SOURCE
DINTERM (CLKTERM)
50
4.0K -2.0V
X
NDIN (NCLK)
50
6.4K
X
-2.0V
VSS
G52246-0, Rev 3.0 04/05/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 5
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.2Gb/s Laser Diode Driver
Figure 6: Control Signals VIP and VIB
I (MIB) 30 mA
VSC7928
VIB VSS + 1.5 Volts (Typical) Typical Bias Current v.s. Bias Voltage I (MIP)
60 mA
VIP VSS + 1.5 Volts (Typical) Typical Modulation Current v.s. Modulation Voltage
Figure 7: Simplified Output Structure
NIOUT
IOUT
IBIAS
X
X
X
VIP
X
IMOD
OUTPUT DIFF PAIR IBIAS
X VIB
X
MIP
X
MIB
Page 6
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52246-0, Rev 3.0 04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7928
SONET/SDH 3.2Gb/s Laser Diode Driver
Figure 8: Pad Assignments for VSC7928 Die
1720m 1620m 50m 50m 50m
120
120m 150m
PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 PAD 28 PAD 27 PAD 26 DCC VSS VSS VSS VSS VIP MIP MIP MIB PAD 1 N/C PAD 2 NDIN PAD 3 DIN PAD 4 DINT PAD 5 CLOCKT PAD 6 CLOCK PAD 7 NCLOCK PAD 8 N/C SEL PAD 9 GND PAD 10 PAD 25 VIB PAD 24 GND PAD 23 IOUT PAD 22 IOUT
30m
1620m
PAD 21 NIOUT PAD 20 NIOUT PAD 19 GND PAD 18 IBIAS GND GND GND GND GND NMARK MARK PAD 11 PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17
1720m
50m
Die Size: Actual Die Size: Pad Size: Pad Pitch: Space Between Pads:
1620m x 1620m 1720mx1720m (after the die are cut up) 120m x 120m 150m 30m
G52246-0, Rev 3.0 04/05/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 7
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.2Gb/s Laser Diode Driver
VSC7928
Package Information - 32 Pin Plastic TQFP Package
Dimension
A A1 A2 D D1 E E1 L e b ddd ccc
mm
1.60 .10 1.40 9.00 7.00 9.00 7.00 .60 .80 .35 0 - 7 .20 .10
Tolerance
MAX .05 .05 .20 .10 .20 .10 +.15/-.10 BASIC .05 MAX MAX
Note:
Package lid and bottom heat spreader are electrically connected to GND within the package.
Page 8
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52246-0, Rev 3.0 04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7928
32-Pin Plastic Package Pin Designation
SONET/SDH 3.2Gb/s Laser Diode Driver
GND
DCC
GND
MIB
MIP
VSS
VSS
VIP
GND NDIN DIN DINT CLKT CLK NCLK GND
GND VIB GND IOUT NIOUT GND GND IBIAS
GND
SEL
GND
GND
GND
NMK
GND
MK
G52246-0, Rev 3.0 04/05/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 9
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.2Gb/s Laser Diode Driver
VSC7928
Ordering Information
The order number for this product is formed by a combination of the device number, and package style.
VSC7928
Device Type VSC7928: 3.2Gb/s Laser Diode Driver
XX
Package Style RA: 32-Pin QFP Gull Wing Plastic Package X : Bare Die
Notice
Vitesse Semiconductor Corporation ("Vitesse") provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited.
Page 10
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52246-0, Rev 3.0 04/05/01


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